Plasma diffusion control apparatus

ABSTRACT

A plasma diffusion control apparatus is provided with a plurality of wires through which current flows in parallel so that lines of magnetic force are generated in a direction parallel to the plasma wall of the diffusion chamber wall. It is preferable that the wires are located in the neighborhood of the diffusion chamber at equal intervals, and arranged so that the direction of the magnetic field generated by wires are parallel to the direction of movement of the plasma. Since the magnetic field is formed in a direction parallel to the inner wall of the diffusion chamber, it is possible to prevent the diffusion of the plasma to the chamber wall. As a result there is no region which is influenced by strong local magnetic fields perpendicular to the plasma chamber wall, so that it is possible to solve the problems caused by substantial amounts of polymer deposition on the inner wall of the plasma diffusion chamber.

CROSS REFERENCE TO RELATED APPLICATIONS

This is a divisional application of application Ser. No. 08/698,362,filed Aug. 15, 1996.

TECHNICAL FIELD

The present invention relates to a semiconductor fabrication apparatus,and more particularly, to a plasma diffusion control method andapparatus for use in a plasma etching apparatus.

BACKGROUND OF THE INVENTION

In widely used etching methods for etching a semiconductor device, aplasma from a plasma source is often supplemented by plasma generated byusing an additional plasma generating apparatus so that the generatedplasma diffuses toward the location of a wafer to be etched, therebyetching layers on the wafer. The diffusion technique is carried out withetching equipment used to produce highly integrated semiconductordevices. Such equipment includes electron cyclotron resonance etchers,inductively coupled plasma etchers and helicon wave plasma etchers, allof which are characterized as low pressure, high density plasmaequipment.

However, when diffusing plasma in order to move the plasma generatedfrom an extra plasma source, plasma density rapidly lowers in theneighborhood of the wafer to be etched due to the diffusion of theplasma. This is true even though the plasma is generated at highdensities. Also, since at the time of diffusion the mobility ofelectrons is more than 10³ times greater than that of ions, the numberof electrons lost from the plasma is greater than that of lost ions,thereby raising the potential of the plasma. In order to prevent thisphenomenon, the conventional technique is to install multiple permanentmagnets around the diffusion chamber to maintain the plasma density.

FIGS. 1A and 1B are a perspective view and a plan view respectively, ofa conventional plasma diffusion chamber. Reference numbers 10 and 12denote respectively, a diffusion chamber wall and permanentmulti-magnets attached to the chamber wall. However, with conventionalmethods, at the location indicated by reference number 14, the directionof the magnetic field is on a plane parallel to the chamber wall. As aresult, the reflection of the plasma by the magnetic field is fullyrealized. In contrast the magnetic flux is configured in a directionperpendicular to the surface of the chamber at the location indicated byreference number 16. As a result the plasma proceeds along the directionof the magnetic flux thereby accelerating the attachment of polymer tothe plasma chamber wall. FIG. 2 is a photograph showing the polymerattached to the chamber wall as a result of using conventional methods.The polymer attached to the chamber wall becomes a source of dust duringthe etching process. Consequently, the yield of the etched semiconductordevices is lowered and the operation rate of the equipment and its lifespan are reduced.

SUMMARY OF THE INVENTION

It is an object of the present invention to provide a plasma diffusioncontrol method and apparatus that is capable of solving one or more ofthe problems identified in the prior conventional diffusion methods.

It is an object of the present invention to provide a plasma diffusioncontrol apparatus which maintains plasma density during the plasmadiffusion control process.

It is another object of the present invention to configure plasma flowin a desired pattern.

It is a further object of the present invention to avoid buildup ofpolymer on the interior wall of a plasma diffusion chamber.

It is yet another object of the present invention to enhance theefficiency of the plasma etching process.

It is yet a further object of the present invention to increase theequipment life span in a diffusion etching system.

It is still another object of the present invention to limit theintroduction of contaminants during a plasma diffusion etching process.

These and other objects of the present invention are achieved by anembodiment of the present invention including a method of controllingplasma diffusion in a plasma chamber. This method includes the steps ofgenerating a plasma flow within the plasma chamber and generating amagnetic field parallel to the wall of the plasma chamber.

In another aspect of the present invention the objects are achieved byplasma diffusion control system having a plasma chamber with a wall.Included is a device for generating a magnetic field in a directionparallel to the wall of the plasma chamber.

According to the present invention, the magnetic field formed in adirection parallel to an inner wall of the diffusion chamber preventsthe plasma from diffusing to the chamber wall. Since there is no regionwhich is influenced by a locally strong magnetic field, it is alsopossible to solve the conventional problem that a considerable amount ofpolymer on the inner wall of the diffusion chamber is locally deposited.

BRIEF DESCRIPTION OF THE DRAWINGS

The above objects and advantages of the present invention will becomemore apparent by describing in detail a preferred embodiment thereofwith reference to the attached drawings in which:

FIG. 1A is a perspective view of a conventional plasma diffusionchamber;

FIG. 1B is a plan view of a conventional plasma diffusion chamber;

FIG. 2 is a photograph depicting polymer attached to the plasma chamberwall as a result of using conventional diffusion methods;

FIG. 3A is a perspective view depicting the shape of a magnetic fieldinduced in a wire when current flows along that wire;

FIG. 3B is a plan view depicting the shape of a magnetic field inducedin a wire when current flows along that wire;

FIG. 4 is a plan view depicting the shape of a magnetic field formedwhen current flows in the same direction along a plurality of adjacent,parallel wires;

FIG. 5 is a perspective view of an apparatus with a plurality ofadjacent, parallel wires mounted around the outer wall of a plasmadiffusion chamber according to the present invention;

FIG. 6 is a cross sectional view of a plasma diffusion chamber aroundwhich twelve parallel wires are wound according to the presentinvention;

FIG. 7 is a graph depicting the change in strength of a magnetic fieldrelative to the distance from the center of the plasma chamber whencurrent flows along twelve wires according to the present invention; and

FIG. 8 is a perspective view of an apparatus of another embodimentaccording with the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIGS. 3A and 3B are perspective and plan views respectively, showing theshape of a magnetic field M induced in a wire when current flows alongthat wire.

As shown in FIGS. 3A and 3B, when current I flows along a straight wire18, the magnetic field M induced in the neighborhood of the wire isgenerated in a concentric direction centered at the wire on a planeperpendicular to the wire. The strength of magnetic field B is expressedas follows: ##EQU1## where r denotes the distance from the center of thewire and c is the speed of light or 3×10¹⁰ cm/sec. Magnetic fieldstrength B is most often expressed in Webers per square meter, or inNewtons per ampere-meter. As depicted in FIG. 3B the direction ofmagnetic field B runs counterclockwise around conductor 18 when currentI moves in the +z direction (out of the drawing towards the viewer).

When a plurality of parallel wires are adjacently arranged and currentsflow through each wire in the same direction, the shape of the compositemagnetic field formed in the neighborhood of the wires is shown in FIG.4. Reference numbers 20, 22, 24, 26 and 28 denote wires through whichthe currents flow to form the composite magnetic field. In thisarrangement, there are no portions where superimposed magnetic fieldlines are sunk or originated. Thus, there are no strong local magneticfields perpendicular to the wall of the plasma chamber. This isdifferent from conventional systems which employ permanent magnetsarranged around a plasma diffusion etching chamber.

With the arrangement of FIG. 4 a change in the strength of the magneticfield is generally slow, and there is no region of the plasma chamberwhich is adversely influenced by strong magnetic field variation.

FIG. 5 depicts an apparatus with a plurality of adjacent, parallel wiresarranged around the outer wall of the plasma diffusion etching chamberaccording to the present invention. Reference numbers 30, 32 and 34respectively denote a plasma diffusion chamber wall, a plasma generationregion and one of the parallel wires through which the current flows.The supply wires indicated by arrows in FIG. 5 carry current to theparallel wires.

Each of the two supply wires connects opposite ends of the parallelwires together. As suggested by the combined magnetic field depicted inFIG. 4, the magnetic field resulting from the arrangement of FIG. 4 isformed in a direction parallel to the wall of the plasma diffusionchamber. This prevents the diffusion of the plasma to the chamber wall.Also, since there is no region which is influenced locally by a strongmagnetic field in a direction perpendicular to the plasma chamber wall,there is no magnetic force pushing the plasma against the chamber wall.As a result, there is no polymer deposited on the inner wall of theplasma diffusion chamber. Not only do the plurality of parallel wires 34arranged on the outer wall of the diffusion chamber avoid magneticfields perpendicular to the chamber wall but they also induce ascreening layer of magnetic field holding the plasma away from theplasma chamber wall.

FIG. 6 is a cross sectional view depicting twelve parallel wiressurrounding the plasma diffusion chamber. Here r denotes the distancefrom the center of the diffusion chamber to a selected point forpurposes of calculating magnetic field strength and R denotes the radiusfrom the center of the diffusion chamber to the outside wall of thediffusion chamber. Reference number 40 denotes a wire through which thecurrent flows and reference number 42 denotes the plasma diffusioncontrol chamber where a magnetic field plasma screening layer is formedby the current flowing through the parallel wires.

Preferably the wires 40 are at equal intervals to each other. In oneexemplary embodiment of the present invention twelve wires 40 are used,although the invention is not limited thereto. For purposes of theconditions depicted in FIG. 7 a current of 10 ampere flows through eachof the twelve wires. It is preferable that the current direction of thewire is parallel to the movement direction of the plasma.

The 10 amperes corresponds to a flow of electric charge in an amountequal to 3×10¹⁰ esu/sec. When the diameter of wire 40 through which thecurrent flows is 0.2 cm, the graph shown in FIG. 7 is obtained. It ispreferable that each wire 40 be made of a thin and wide band shapedconductor.

The change in strength of the magnetic field in the direction of theplasma chamber center from the location of one of the wires iscalculated by using a computer. Here r/R is a normalized radius which isa value indicating a selected distance from the chamber center as aratio to the chamber radius. In this example, the strength of themagnetic field on the surface of the inner wall of the chamber is notless than 40 gauss, which is a magnetic field sufficient for configuringa screen between the channel wall and the diffusing plasma.

If the change in magnetic field strength is observed while moving fromthe surface of the chamber wall to the center of the chamber, the graphof FIG. 7 indicates that the strength of the magnetic field is rapidlyreduced even at a distance only slightly separated from the surface ofthe chamber wall.

As shown in FIG. 7, the magnetic field approaches zero where thenormalized radius r/R is at a value below about 0.8. In other words, themagnetic field exists in the region where r/R is above about 0.8. Basedon the parameters of FIG. 7 the magnetic field used to constitute themagnetic field plasma screening layer effectively exists only in theneighborhood of the inner wall surface of the chamber to screen theplasma from the plasma chamber wall. The influence of the magnetic fieldin the central portion of the plasma chamber is negligibly small.Accordingly, the magnetic field, confined as it is to the inside edge ofthe plasma chamber, has no influence on the etching process so thatchanges in the magnetic field will not lead to damage during the etchingprocess.

According to another embodiment of the present invention in FIG. 8, theplurality of current-carrying wires 34 for providing the magnetic fieldplasma screening layer can be arranged in a direction parallel to thewall of the plasma diffusion chamber and perpendicular to the axialdirection of the plasma chamber. This wire arrangement also provides amagnetic shielding for preventing the plasma flow from attaching to thewall of the plasma diffusion chamber.

In this embodiment, the current flow has an azimuthal direction and isstill parallel to the wall 30 of the plasma diffusion chamber. Theplurality of current-carrying wires 34 may be equidistantly arranged andmay be made of a thin and wide band shaped conductor. The current pathfor providing a magnetic shielding may also be a sheet current pathwhich is substantially the same shape as the plasma diffusion chamberwall.

The plan view of the wall of the plasma diffusion chamber may be acircle like that shown in FIG. 6, or it may be rectangular shaped orsome other shape.

In the present invention, therefore, the magnetic field is formed in adirection parallel to the inner wall of the plasma diffusion chamber sothat it is possible to prevent the diffusion of the plasma to thechamber wall. Also, since there is no region which is influenced bystrong local magnetic fields perpendicular to the plasma chamber wall,it is possible to resolve the problems caused by considerable amounts ofpolymer deposition on the inner wall of the diffusion chamber. Theavoidance of the polymer depositions consequently reduces thecontamination in the diffusion chamber, facilitating equipmentmaintenance and extending equipment life.

The present invention is not limited to the above embodiment and manyalterations can be made by those of ordinary skill in the art within thetechnical ideas of the present invention. Accordingly, the inventionshould be considered to include any and all configurations,modifications, variations, combinations, equivalent arrangements orexpansions falling within the scope of the following claims.

What is claimed is:
 1. A method of controlling plasma diffusion in aplasma diffusion chamber having a wall, comprising the steps of:(a)generating a plasma flow by a plasma generator; and (b) generating amagnetic field parallel to said wall of said plasma chamber by providingat least one current path in proximity to the plasma diffusion chamberwall, and applying current to the current path to form a plasma magneticfield screen in proximity to the plasma diffusion chamber wall, whereinthe current path includes a plurality of current-carrying wires spacedaround said plasma diffusion chamber and arranged in a directionparallel to said plasma diffusion chamber wall and parallel to an axialdirection of the plasma diffusion chamber.
 2. The method of claim 1,wherein said plasma flow is configured to follow a direction parallel tosaid plasma chamber wall.
 3. The method of claim 2, wherein the currentpath includes a sheet current path which is substantially the same shapeas the plasma diffusion chamber wall.
 4. The method of claim 2, whereinsaid magnetic field is confined between said plasma diffusion chamberwall at distance r from the center of said plasma diffusion chamber,wherein R is the radius of the plasma diffusion chamber, such that r/Ris greater than 0.8.
 5. The method of claim 4, wherein said magneticfield is over 40 gauss in strength.
 6. The method of claim 1, whereineach of the current-carrying wires is made of a thin and wide bandshaped conductor.
 7. The method of claim 1, further comprising the stepof etching a semiconductor device within the plasma diffusion chamber.8. A method of controlling plasma diffusion in a plasma diffusionchamber having a wall, comprising the steps of:(a) generating a plasmaflow by a plasma generator; and (b) generating a magnetic field parallelto said wall of said plasma chamber by providing at least one currentpath in proximity to the plasma diffusion chamber wall, and applyingcurrent to the current path to form a plasma magnetic field screen inproximity to the plasma diffusion chamber wall, wherein the current pathincludes a plurality of current-carrying wires spaced around said plasmadiffusion chamber and arranged in a direction parallel to said plasmadiffusion chamber wall and perpendicular to an axial direction of theplasma diffusion chamber.